RJL6012DPE-00#J3
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 600V 10A 4LDPAK
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the RJL6012DPE-00#J3 single MOSFET from Renesas Electronics America Inc. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RJL6012DPE-00#J3 combines cutting-edge technology with Renesas Electronics America Inc's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LDPAK
- Package / Case: SC-83
Related Products
STMicroelectronics
STS4DNFS30L
onsemi
FDMC4435BZ-F126
onsemi
NTBV25P06T4G
Microsemi Corporation
APT23F60S
onsemi
FDMC0310AS
Infineon Technologies
IPB80N04S2-H4ATMA2
Infineon Technologies
IPW80R290C3A
Infineon Technologies
IRL3715S
Alpha & Omega Semiconductor Inc.
AO7413_030
NXP USA Inc.