RJM0306JSP-01#J0
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET 2N/2P-CH 30V 3.5A 8-SOP
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The RJM0306JSP-01#J0 from Renesas Electronics America Inc is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the RJM0306JSP-01#J0 provides reliable performance in demanding environments. Choose Renesas Electronics America Inc for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N and 2 P-Channel (Half Bridge)
- FET Feature: Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 3.5A
- Rds On (Max) @ Id, Vgs: 65mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 290pF @ 10V
- Power - Max: 2.2W
- Operating Temperature: -
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOP
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