RJP4009ANS-01#Q5
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT NCH 400V 8VSON
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Upgrade your power management systems with the RJP4009ANS-01#Q5 Single IGBT transistor from Renesas Electronics America Inc. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the RJP4009ANS-01#Q5 provides reliable and efficient operation. Renesas Electronics America Inc's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose RJP4009ANS-01#Q5 for your critical power needs.
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 400 V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 9V @ 2.5V, 150A
- Power - Max: 1.8 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-VDFN
- Supplier Device Package: 8-VSON (3x4.4)
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