RJP60V0DPM-00#T1
Renesas Electronics America Inc

Renesas Electronics America Inc
IGBT 600V 45A 40W TO-3PFM
$3.65
Available to order
Reference Price (USD)
1+
$3.82000
10+
$3.41300
25+
$3.07120
Exquisite packaging
Discount
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The RJP60V0DPM-00#T1 Single IGBT transistor by Renesas Electronics America Inc is a versatile component in the Discrete Semiconductor Products range. Designed for efficiency and durability, it features high voltage tolerance and minimal power dissipation. Ideal for use in automotive electronics, HVAC systems, and power tools, the RJP60V0DPM-00#T1 provides consistent performance in varied conditions. Rely on Renesas Electronics America Inc's innovation to power your next-generation devices with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 45 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 22A
- Power - Max: 40 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 75 nC
- Td (on/off) @ 25°C: 45ns/100ns
- Test Condition: 300V, 22A, 5Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3PFM