RJP65T54DPM-A0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT TRENCH 650V 60A TO-3PFP
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Discover the RJP65T54DPM-A0#T2 Single IGBT transistor by Renesas Electronics America Inc, a standout in the Discrete Semiconductor Products lineup. This component excels in high-voltage and high-current applications, featuring low conduction losses and excellent switching performance. Perfect for use in welding equipment, UPS systems, and induction heating, the RJP65T54DPM-A0#T2 ensures reliability and efficiency. Its rugged construction and advanced technology make it a top choice for engineers seeking durable and high-performing IGBTs. Upgrade your designs with the RJP65T54DPM-A0#T2 for unmatched power control.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 1.68V @ 15V, 30A
- Power - Max: 63.5 W
- Switching Energy: 330µJ (on), 760µJ (off)
- Input Type: Standard
- Gate Charge: 72 nC
- Td (on/off) @ 25°C: 35ns/120ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: SC-94
- Supplier Device Package: TO-3PFP
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