RJU003N03T106
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 300MA UMT3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.07200
6,000+
$0.06480
15,000+
$0.05760
30,000+
$0.05400
75,000+
$0.05040
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the RJU003N03T106 single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RJU003N03T106 combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 300mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 24 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 200mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: UMT3
- Package / Case: SC-70, SOT-323
Related Products
onsemi
HUFA76445S3ST
Diodes Incorporated
ZVP0120ASTOA
onsemi
FQPF9N08
STMicroelectronics
STU27N3LH5
Infineon Technologies
IPB80N06S2L-H5
Rohm Semiconductor
RSR020P05FRATL
IXYS
IXFN66N50Q2
Taiwan Semiconductor Corporation
TSM2311CX RFG
Vishay Siliconix
IRFPG40
Vishay Siliconix