RM2305B
Rectron USA
Rectron USA
MOSFET P-CH 20V 3A/4.1A SOT23
$0.04
Available to order
Reference Price (USD)
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$0.03900
500+
$0.03861
1000+
$0.03822
1500+
$0.03783
2000+
$0.03744
2500+
$0.03705
Exquisite packaging
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Discover the RM2305B from Rectron USA, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RM2305B ensures reliable performance in demanding environments. Upgrade your circuit designs with Rectron USA's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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