RM3N700S4
Rectron USA
Rectron USA
MOSFET N-CHANNEL 700V 3A SOT223
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the RM3N700S4 from Rectron USA, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the RM3N700S4 ensures reliable performance in demanding environments. Upgrade your circuit designs with Rectron USA's cutting-edge technology today.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 6.2W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223-2
- Package / Case: TO-261-3
Related Products
Vishay Siliconix
SIR184LDP-T1-RE3
Panjit International Inc.
PJA138K_R1_00001
Rectron USA
RM2333A
IXYS
IXTA02N250HV
onsemi
MCH6344-TL-H
Rohm Semiconductor
RQ5L030SNTL
IXYS
IXTN90N25L2
Nexperia USA Inc.
BUK9Y59-60E,115
STMicroelectronics
STH400N4F6-2
Vishay Siliconix