RM4P20ES6
Rectron USA
Rectron USA
MOSFET P-CH 20V 3A/4.1A SOT23-6
$0.07
Available to order
Reference Price (USD)
1+
$0.06900
500+
$0.06831
1000+
$0.06762
1500+
$0.06693
2000+
$0.06624
2500+
$0.06555
Exquisite packaging
Discount
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Optimize your power electronics with the RM4P20ES6 single MOSFET from Rectron USA. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RM4P20ES6 combines cutting-edge technology with Rectron USA's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 4.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 52mOhm @ 4.1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 1.7W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
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