RM4P30S6
Rectron USA
Rectron USA
MOSFET P-CH 30V 4.2A SOT23-6
$0.05
Available to order
Reference Price (USD)
1+
$0.05200
500+
$0.05148
1000+
$0.05096
1500+
$0.05044
2000+
$0.04992
2500+
$0.0494
Exquisite packaging
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The RM4P30S6 from Rectron USA redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RM4P30S6 offers the precision and reliability you need. Trust Rectron USA to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-6
- Package / Case: SOT-23-6
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