Shopping cart

Subtotal: $0.00

RM5N650IP

Rectron USA
RM5N650IP Preview
Rectron USA
MOSFET N-CHANNEL 650V 5A TO251
$0.45
Available to order
Reference Price (USD)
1+
$0.45000
500+
$0.4455
1000+
$0.441
1500+
$0.4365
2000+
$0.432
2500+
$0.4275
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 49W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Stub Leads, IPak

Related Products

Microchip Technology

APT28M120B2

Nexperia USA Inc.

BUK7215-55A,118

Vishay Siliconix

SIE882DF-T1-GE3

Nexperia USA Inc.

BUK9875-100A/CUX

Vishay Siliconix

IRFP21N60LPBF

Nexperia USA Inc.

BSH103BKR

Top