RM8N700TI
Rectron USA
Rectron USA
MOSFET N-CHANNEL 700V 8A TO220F
$0.68
Available to order
Reference Price (USD)
1+
$0.68000
500+
$0.6732
1000+
$0.6664
1500+
$0.6596
2000+
$0.6528
2500+
$0.646
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your designs with the RM8N700TI by Rectron USA, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RM8N700TI is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 700 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Tj)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 31.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220F
- Package / Case: TO-220-3 Full Pack
Related Products
Micro Commercial Co
MCQ4435A-TP
Renesas Electronics America Inc
RJK0366DSP-00#J0
STMicroelectronics
STN3N45K3
Vishay Siliconix
SUP90142E-GE3
Vishay Siliconix
SI3440ADV-T1-GE3
Rectron USA
RM80N60LD
onsemi
MTD5N25ET4
Renesas Electronics America Inc
NP80N04NDG-S18-AY
Diodes Incorporated
DMP4011SK3-13
Infineon Technologies