RN1101ACT(TPL3)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.08A CST3
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Optimize your PCB layout with Toshiba Semiconductor and Storage's space-saving RN1101ACT(TPL3). This pre-configured bipolar transistor eliminates external biasing components while delivering 250mW power dissipation. Applications span from smart home appliances to automotive lighting systems. Toshiba Semiconductor and Storage combines 20+ years of semiconductor expertise with cutting-edge silicon technology in this robust solution.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 80 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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