RN1110CT(TPL3)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 20V 0.05A CST3
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The RN1110CT(TPL3) represents Toshiba Semiconductor and Storage's commitment to innovation in discrete semiconductors. This pre-biased single BJT transistor excels in: Automated test equipment HVAC control boards Robotics servo drives With hFE matching within 10% across production lots, it guarantees consistent performance. Its 50V VCEO rating handles demanding industrial environments with ease.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 50 mA
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 50 mW
- Mounting Type: Surface Mount
- Package / Case: SC-101, SOT-883
- Supplier Device Package: CST3
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