RN1116MFV,L3F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A VESM
$0.03
Available to order
Reference Price (USD)
8,000+
$0.02898
Exquisite packaging
Discount
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Engineers choose RN1116MFV,L3F for its exceptional linearity in amplification circuits. Toshiba Semiconductor and Storage's pre-biased BJT transistor demonstrates 0.1 A ultra-low cutoff current, making it indispensable for medical equipment and precision instrumentation. The TO-92 package ensures easy integration into existing designs. Discover why global OEMs prefer this solution for telecom infrastructure and renewable energy systems.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
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