RN1306,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A USM
$0.20
Available to order
Reference Price (USD)
3,000+
$0.03481
6,000+
$0.03140
15,000+
$0.02730
30,000+
$0.02457
75,000+
$0.02184
150,000+
$0.01820
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN1306,LF represents Toshiba Semiconductor and Storage's commitment to innovation in discrete semiconductors. This pre-biased single BJT transistor excels in: Automated test equipment HVAC control boards Robotics servo drives With hFE matching within 10% across production lots, it guarantees consistent performance. Its 50V VCEO rating handles demanding industrial environments with ease.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 4.7 kOhms
- Resistor - Emitter Base (R2): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 100 mW
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: SC-70
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