RN1414,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS PREBIAS NPN 50V 0.1A SMINI
$0.04
Available to order
Reference Price (USD)
3,000+
$0.03481
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN1414,LF represents Toshiba Semiconductor and Storage's commitment to innovation in discrete semiconductors. This pre-biased single BJT transistor excels in: Automated test equipment HVAC control boards Robotics servo drives With hFE matching within 10% across production lots, it guarantees consistent performance. Its 50V VCEO rating handles demanding industrial environments with ease.
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 1 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
Related Products
Toshiba Semiconductor and Storage
TDTA114Y,LM
Toshiba Semiconductor and Storage
RN2103MFV,L3F(CT
Rohm Semiconductor
DTA115ECAT116
Toshiba Semiconductor and Storage
RN2422TE85LF
Toshiba Semiconductor and Storage
RN1108(T5L,F,T)
onsemi
DTA114TM3T5G
Diodes Incorporated
DDTA114GCA-7-F
onsemi
NSBC123JF3T5G
onsemi
NSBC144TF3T5G
Nexperia USA Inc.