RN1706,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
$0.31
Available to order
Reference Price (USD)
1+
$0.31000
500+
$0.3069
1000+
$0.3038
1500+
$0.3007
2000+
$0.2976
2500+
$0.2945
Exquisite packaging
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Enhance your electronic projects with Toshiba Semiconductor and Storage's RN1706,LF, a high-reliability pre-biased BJT array. This discrete semiconductor solution offers matched transistor pairs with integrated bias networks, ensuring optimal performance in amplification and switching tasks. The RN1706,LF is perfect for use in audio equipment, power supplies, and automotive control systems. With Toshiba Semiconductor and Storage's rigorous quality control, each array provides long-term stability and minimal distortion. Compact, efficient, and easy to integrate, the RN1706,LF is the go-to choice for engineers seeking dependable transistor solutions.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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Toshiba Semiconductor and Storage