RN1706JE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W ESV
$0.45
Available to order
Reference Price (USD)
1+
$0.57000
Exquisite packaging
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Optimize your designs with Toshiba Semiconductor and Storage's RN1706JE(TE85L,F), a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The RN1706JE(TE85L,F) is widely used in lighting systems, portable electronics, and automotive accessories. Toshiba Semiconductor and Storage's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the RN1706JE(TE85L,F) is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: ESV
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