RN1711,LF
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
$0.05
Available to order
Reference Price (USD)
1+
$0.05364
500+
$0.0531036
1000+
$0.0525672
1500+
$0.0520308
2000+
$0.0514944
2500+
$0.050958
Exquisite packaging
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The RN1711,LF by Toshiba Semiconductor and Storage is a top-tier pre-biased BJT array designed to streamline your circuit designs. Featuring multiple transistors with pre-adjusted bias, this product reduces external component requirements and improves system efficiency. Its excellent thermal characteristics and low leakage current make it suitable for precision applications like sensor interfaces and battery management systems. Toshiba Semiconductor and Storage's RN1711,LF is trusted by engineers worldwide for its durability and performance in harsh environments. From consumer gadgets to industrial automation, this transistor array delivers consistent results every time.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 5-TSSOP, SC-70-5, SOT-353
- Supplier Device Package: USV
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