RN1904FE,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W ES6
$0.04
Available to order
Reference Price (USD)
4,000+
$0.06510
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN1904FE,LF(CT from Toshiba Semiconductor and Storage represents the pinnacle of pre-biased BJT array technology. Designed for high-density circuits, this product features low on-resistance and fast switching speeds, ideal for digital and analog applications. Its robust construction ensures reliable operation in telecommunications, computing, and industrial machinery. Toshiba Semiconductor and Storage's expertise in semiconductor manufacturing guarantees that the RN1904FE,LF(CT meets the highest industry standards. Whether you're designing advanced control systems or simple electronic switches, this transistor array offers unparalleled performance and versatility.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
Related Products
Nexperia USA Inc.
PUMD16,115
Rohm Semiconductor
EMG11T2R
Toshiba Semiconductor and Storage
RN2963(TE85L,F)
onsemi
MUN5237DW1T1
NXP USA Inc.
PBLS4005V,115
Nexperia USA Inc.
NHUMD10F
onsemi
MUN5213DW1T1
Panasonic Electronic Components
UP0431400L
Nexperia USA Inc.
PEMH13,115
Nexperia USA Inc.