RN1911,LF(CT
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
$0.05
Available to order
Reference Price (USD)
1+
$0.04876
500+
$0.0482724
1000+
$0.0477848
1500+
$0.0472972
2000+
$0.0468096
2500+
$0.046322
Exquisite packaging
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Introducing Toshiba Semiconductor and Storage's RN1911,LF(CT, a premium pre-biased BJT array that combines innovation with practicality. This transistor array is optimized for low-voltage applications, offering high gain and minimal distortion. Its compact footprint and integrated bias network make it perfect for wearable devices, smart home systems, and medical instruments. Toshiba Semiconductor and Storage's dedication to excellence ensures that the RN1911,LF(CT meets the most demanding specifications. With superior ESD protection and long-term stability, this product is a must-have for modern electronic designs.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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