RN1967FE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2NPN PREBIAS 0.1W ES6
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The RN1967FE(TE85L,F) from Toshiba Semiconductor and Storage is a versatile pre-biased BJT array designed to meet the needs of diverse electronic applications. Featuring matched transistors and built-in resistors, this product enhances circuit performance while reducing design complexity. It is commonly used in audio amplifiers, power converters, and automotive electronics. Toshiba Semiconductor and Storage's commitment to quality ensures that the RN1967FE(TE85L,F) operates flawlessly in both commercial and industrial settings. With its excellent thermal performance and high reliability, this transistor array is an essential component for any engineer's toolkit.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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