RN2903FE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
$0.35
Available to order
Reference Price (USD)
4,000+
$0.06510
8,000+
$0.05859
12,000+
$0.05208
28,000+
$0.04883
100,000+
$0.04340
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN2903FE(TE85L,F) from Toshiba Semiconductor and Storage is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision applications. This pre-biased transistor array integrates multiple BJTs in a compact package, offering excellent thermal stability and consistent performance. Ideal for amplification and switching circuits, the RN2903FE(TE85L,F) ensures low noise and high gain, making it a reliable choice for industrial and consumer electronics. Common applications include motor control, LED drivers, and audio amplifiers. With robust construction and advanced manufacturing techniques, Toshiba Semiconductor and Storage's RN2903FE(TE85L,F) delivers unmatched reliability in demanding environments.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
Related Products
onsemi
NSVMUN5334DW1T1G
Nexperia USA Inc.
PUMB19,115
Rohm Semiconductor
UMH10NFHATN
onsemi
NSBC143TDXV6T1
Toshiba Semiconductor and Storage
RN1908FE,LXHF(CT
Nexperia USA Inc.
PRMD3Z
Panasonic Electronic Components
UP0339000L
Toshiba Semiconductor and Storage
RN1902,LF(CT
Nexperia USA Inc.
PBLS2021D,115
Rohm Semiconductor