RN2908FE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
$0.35
Available to order
Reference Price (USD)
4,000+
$0.06510
8,000+
$0.05859
12,000+
$0.05208
28,000+
$0.04883
100,000+
$0.04340
Exquisite packaging
Discount
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The RN2908FE(TE85L,F) by Toshiba Semiconductor and Storage is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. Toshiba Semiconductor and Storage's state-of-the-art production facilities ensure that the RN2908FE(TE85L,F) delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
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