RN2967FE(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
TRANS 2PNP PREBIAS 0.1W ES6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RN2967FE(TE85L,F) from Toshiba Semiconductor and Storage is a versatile pre-biased BJT array designed to meet the needs of diverse electronic applications. Featuring matched transistors and built-in resistors, this product enhances circuit performance while reducing design complexity. It is commonly used in audio amplifiers, power converters, and automotive electronics. Toshiba Semiconductor and Storage's commitment to quality ensures that the RN2967FE(TE85L,F) operates flawlessly in both commercial and industrial settings. With its excellent thermal performance and high reliability, this transistor array is an essential component for any engineer's toolkit.
Specifications
- Product Status: Obsolete
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 200MHz
- Power - Max: 100mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: ES6
Related Products
Rohm Semiconductor
IMH15AT110
Toshiba Semiconductor and Storage
RN1907,LF
Panasonic Electronic Components
DMG264040R
Rohm Semiconductor
EMD22FHAT2R
Panasonic Electronic Components
UP0411200L
Toshiba Semiconductor and Storage
RN2903,LF
Toshiba Semiconductor and Storage
RN2970FE(TE85L,F)
Panasonic Electronic Components
DMA561020R
Infineon Technologies
BCR135SH6827XTSA1
Diodes Incorporated