RN4990(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
NPN + PNP BRT Q1BSR=4.7KOHM Q1BE
$0.35
Available to order
Reference Price (USD)
1+
$0.35000
500+
$0.3465
1000+
$0.343
1500+
$0.3395
2000+
$0.336
2500+
$0.3325
Exquisite packaging
Discount
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Optimize your designs with Toshiba Semiconductor and Storage's RN4990(TE85L,F), a pre-biased BJT array built for precision and efficiency. This transistor array simplifies circuit layout by incorporating bias resistors within the package, reducing assembly time and cost. The RN4990(TE85L,F) is widely used in lighting systems, portable electronics, and automotive accessories. Toshiba Semiconductor and Storage's innovative approach ensures high yield and consistent quality across all production batches. With excellent thermal management and low power consumption, the RN4990(TE85L,F) is a smart choice for energy-sensitive applications.
Specifications
- Product Status: Active
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 4.7kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: 250MHz, 200MHz
- Power - Max: 200mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
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