RQ3G100GNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 40V 10A 8HSMT
$0.57
Available to order
Reference Price (USD)
3,000+
$0.15810
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RQ3G100GNTB from Rohm Semiconductor redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RQ3G100GNTB offers the precision and reliability you need. Trust Rohm Semiconductor to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
Related Products
Diodes Incorporated
DMT6009LSS-13
Vishay Siliconix
IRFZ24STRRPBF
Microchip Technology
APT26M100JCU2
Fairchild Semiconductor
FQB25N33TM-F085
STMicroelectronics
STB18NM80
Infineon Technologies
IRLMS2002TRPBF
Rohm Semiconductor
R6006JNXC7G
Fairchild Semiconductor
FDB6021P
onsemi
FDMC86340ET80
Vishay Siliconix