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RQA0004PXDQS#H1

Renesas Electronics America Inc
RQA0004PXDQS#H1 Preview
Renesas Electronics America Inc
MOSFET N-CH 16V 300MA UPAK
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16 V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 900mV @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±5V
  • Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 0 V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Operating Temperature: 150°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UPAK
  • Package / Case: TO-243AA

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