RQA0009SXAQS#H1
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 16V 3.2A UPAK
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The RQA0009SXAQS#H1 from Renesas Electronics America Inc redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the RQA0009SXAQS#H1 offers the precision and reliability you need. Trust Renesas Electronics America Inc to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 0 V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UPAK
- Package / Case: TO-243AA
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