RQA0009TXDQS#H1
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 16V 3.2A UPAK
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Upgrade your designs with the RQA0009TXDQS#H1 by Renesas Electronics America Inc, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the RQA0009TXDQS#H1 is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 16 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 800mV @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±5V
- Input Capacitance (Ciss) (Max) @ Vds: 76 pF @ 0 V
- FET Feature: -
- Power Dissipation (Max): 15W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: UPAK
- Package / Case: TO-243AA
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