RS1E130GNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 13A 8HSOP
$0.66
Available to order
Reference Price (USD)
2,500+
$0.18445
5,000+
$0.17255
12,500+
$0.16660
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the RS1E130GNTB single MOSFET from Rohm Semiconductor. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust Rohm Semiconductor's RS1E130GNTB for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11.7mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 22.2W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
Related Products
Toshiba Semiconductor and Storage
TK72E12N1,S1X
Nexperia USA Inc.
BSS123,215
Analog Devices Inc./Maxim Integrated
MAX8555AEUB
onsemi
FDMC5614P
IXYS
IXFB110N60P3
Diodes Incorporated
DMN10H170SVTQ-7
IXYS
IXFN120N65X2
Infineon Technologies
BSC0805LSATMA1
onsemi
FDD4685
Infineon Technologies