RS1E280GNTB
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 30V 28A 8HSOP
$0.83
Available to order
Reference Price (USD)
2,500+
$0.35140
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the RS1E280GNTB single MOSFET from Rohm Semiconductor. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the RS1E280GNTB combines cutting-edge technology with Rohm Semiconductor's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 28A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.6mOhm @ 28A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 31W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
Related Products
STMicroelectronics
STW56N65M2-4
Vishay Siliconix
SIR178DP-T1-RE3
Vishay Siliconix
SI2307BDS-T1-GE3
STMicroelectronics
STW48N60M6
STMicroelectronics
STFI20NK50Z
STMicroelectronics
STW21NM60ND
Toshiba Semiconductor and Storage
TK39J60W5,S1VQ
STMicroelectronics
STD4N52K3
Vishay Siliconix
IRF840ALPBF
Infineon Technologies