Shopping cart

Subtotal: $0.00

RS1GLHM2G

Taiwan Semiconductor Corporation
RS1GLHM2G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 800MA SUBSMA
$0.00
Available to order
Reference Price (USD)
15,000+
$0.04675
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Micro Commercial Co

RL253-TP

Taiwan Semiconductor Corporation

SF13GH

Vishay General Semiconductor - Diodes Division

RS1PGHE3/85A

Vishay General Semiconductor - Diodes Division

EGL41D/1

Vishay General Semiconductor - Diodes Division

V4PAL45HM3/I

Vishay General Semiconductor - Diodes Division

MBRS190TR

Taiwan Semiconductor Corporation

BAV101 L1G

Vishay General Semiconductor - Diodes Division

AS3PJHM3/87A

Vishay General Semiconductor - Diodes Division

MBRB1050HE3/45

Top