Shopping cart

Subtotal: $0.00

RS1JLHMHG

Taiwan Semiconductor Corporation
RS1JLHMHG Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 800MA SUBSMA
$0.00
Available to order
Reference Price (USD)
20,000+
$0.04675
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 800mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

1N5617GPHE3/54

Taiwan Semiconductor Corporation

GPA804 C0G

Diodes Incorporated

SBM1040-13

Vishay General Semiconductor - Diodes Division

GP10GHM3/54

Diodes Incorporated

1N5822-T

Vishay General Semiconductor - Diodes Division

RS1JHE3/61T

Taiwan Semiconductor Corporation

UG54G A0G

Taiwan Semiconductor Corporation

1N5398GHB0G

Vishay General Semiconductor - Diodes Division

EGP10FHE3/54

Diodes Incorporated

RS3MB-13

Top