RS3G160ATTB1
Rohm Semiconductor
Rohm Semiconductor
PCH -40V -16A POWER MOSFET - RS3
$2.60
Available to order
Reference Price (USD)
1+
$2.60000
500+
$2.574
1000+
$2.548
1500+
$2.522
2000+
$2.496
2500+
$2.47
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RS3G160ATTB1 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's RS3G160ATTB1 for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 1.4W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Fairchild Semiconductor
FQPF13N50C
Rohm Semiconductor
RP1E090RPTR
Rohm Semiconductor
R8011KNXC7G
Infineon Technologies
IRFR2307ZTRLPBF
Vishay Siliconix
SQS411ENW-T1_GE3
Nexperia USA Inc.
PSMN1R0-30YLC,115
Renesas Electronics America Inc
N0601N-ZK-E1-AY
Infineon Technologies
IPB64N25S320ATMA1
Infineon Technologies
AUIRF7739L2TR
Microchip Technology