RS6R060BHTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 150V 60A, HSOP8, POWER MOSFE
$3.48
Available to order
Reference Price (USD)
1+
$3.48000
500+
$3.4452
1000+
$3.4104
1500+
$3.3756
2000+
$3.3408
2500+
$3.306
Exquisite packaging
Discount
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The RS6R060BHTB1 by Rohm Semiconductor is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose Rohm Semiconductor for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 21.8mOhm @ 60A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2750 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 104W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSOP
- Package / Case: 8-PowerTDFN
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