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RT1E040RPTR

Rohm Semiconductor
RT1E040RPTR Preview
Rohm Semiconductor
MOSFET P-CH 30V 4A 8TSST
$0.00
Available to order
Reference Price (USD)
3,000+
$0.14124
6,000+
$0.13268
15,000+
$0.12412
30,000+
$0.11984
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 550mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-TSST
  • Package / Case: 8-SMD, Flat Lead

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