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RTU002P02T106

Rohm Semiconductor
RTU002P02T106 Preview
Rohm Semiconductor
MOSFET P-CH 20V 250MA UMT3
$0.00
Available to order
Reference Price (USD)
3,000+
$0.13860
6,000+
$0.13020
15,000+
$0.12180
30,000+
$0.11760
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 250mA, 4.5V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 200mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: UMT3
  • Package / Case: SC-70, SOT-323

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