RX1214B300YI
Rochester Electronics, LLC
Rochester Electronics, LLC
RX1214B300Y - MICROWAVE POWER TR
$436.80
Available to order
Reference Price (USD)
1+
$436.80000
500+
$432.432
1000+
$428.064
1500+
$423.696
2000+
$419.328
2500+
$414.96
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing the RX1214B300YI, a high-performance RF Bipolar Junction Transistor (BJT) from Rochester Electronics, LLC, designed for the Discrete Semiconductor Products market. This transistor excels in RF amplification, offering high linearity and low phase noise. Its versatile design makes it suitable for a wide range of applications, including cellular base stations, satellite communication, and RF test equipment. The RX1214B300YI features high power gain, excellent thermal performance, and long-term durability. Whether you're working on consumer electronics or industrial systems, this transistor delivers unmatched performance. Rely on Rochester Electronics, LLC for top-tier RF BJT solutions.
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 60V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 8dB
- Power - Max: 570W
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 21A
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-439A
- Supplier Device Package: CDFM2
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