S07J-GS08
Vishay General Semiconductor - Diodes Division
         
                
                                Vishay General Semiconductor - Diodes Division                            
                        
                                DIODE GEN PURP 600V 1.5A DO219AB                            
                        $0.47
                            
                                
                                Available to order
                            
                        Reference Price (USD)
3,000+
                                            $0.10759
                                        6,000+
                                            $0.10229
                                        15,000+
                                            $0.09434
                                        30,000+
                                            $0.08904
                                        75,000+
                                            $0.08639
                                        Exquisite packaging
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                    The S07J-GS08 from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's S07J-GS08 for superior performance and durability in demanding environments.                
            Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 700mA
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Capacitance @ Vr, F: 4pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: DO-219AB (SMF)
- Operating Temperature - Junction: -55°C ~ 150°C

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    