S1G-E3/1
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO214AC
$0.00
Available to order
Reference Price (USD)
12,000+
$0.04301
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The S1G-E3/1 by Vishay General Semiconductor - Diodes Division is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The S1G-E3/1 is also used in smart home devices and wearable technology, ensuring seamless operation. Vishay General Semiconductor - Diodes Division's expertise in semiconductor technology guarantees that the S1G-E3/1 delivers top-notch performance in any application.
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.8 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 400 V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Vishay General Semiconductor - Diodes Division
MSS1P4-E3/89A
Vishay General Semiconductor - Diodes Division
GP02-30-M3/54
Diodes Incorporated
PR1005GL-T
Taiwan Semiconductor Corporation
MBRS1635HMNG
Vishay General Semiconductor - Diodes Division
BY133GPHE3/54
Vishay General Semiconductor - Diodes Division
1N4006GPHE3/54
Micro Commercial Co
EGP10A-TP
Taiwan Semiconductor Corporation
1N5393G A0G
Infineon Technologies
D126B45CXPSA1
Taiwan Semiconductor Corporation