S1JR3
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
1A, 600V, GLASS PASSIVATED SMD R
$0.00
Available to order
Reference Price (USD)
10,800+
$0.03900
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The S1JR3 by Taiwan Semiconductor Corporation is a high-efficiency single rectifier diode designed for modern electronic applications. Part of the Diodes - Rectifiers - Single category, it provides excellent performance in power conversion and voltage regulation. Its low leakage current and high surge capacity make it suitable for medical imaging devices, data centers, and telecommunications infrastructure. The S1JR3 is also used in smart home devices and wearable technology, ensuring seamless operation. Taiwan Semiconductor Corporation's expertise in semiconductor technology guarantees that the S1JR3 delivers top-notch performance in any application.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 1.5 µs
- Current - Reverse Leakage @ Vr: 1 µA @ 600 V
- Capacitance @ Vr, F: 12pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 175°C
Related Products
onsemi
MRA4007T3
Vishay General Semiconductor - Diodes Division
GP20G-E3/73
Vishay General Semiconductor - Diodes Division
GP10DEHM3/73
Comchip Technology
CDBV120-G
Taiwan Semiconductor Corporation
HS1DL RQG
Taiwan Semiconductor Corporation
ES1DLHMHG
Taiwan Semiconductor Corporation
2A07G A0G
Microchip Technology
JANTX1N6661US
Diodes Incorporated
PR1504S-T
Vishay General Semiconductor - Diodes Division