S3MHE3/9AT
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 3A DO214AB
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Optimize your electronic designs with the S3MHE3/9AT single rectifier diode from Vishay General Semiconductor - Diodes Division. This diode, part of the Discrete Semiconductor Products family, offers exceptional rectification efficiency and thermal stability. Its compact design and high current capacity make it suitable for space-constrained applications like mobile devices, laptops, and IoT gadgets. The S3MHE3/9AT is also ideal for automotive electronics, including alternators and voltage regulators, where reliability is critical. Vishay General Semiconductor - Diodes Division's commitment to innovation ensures that the S3MHE3/9AT meets the highest industry standards for performance and longevity.
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1000 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 2.5 µs
- Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
- Capacitance @ Vr, F: 60pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 150°C
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