S80KS5123GABHM020
Infineon Technologies
Infineon Technologies
HYPERRAM
$27.15
Available to order
Reference Price (USD)
1+
$27.15000
500+
$26.8785
1000+
$26.607
1500+
$26.3355
2000+
$26.064
2500+
$25.7925
Exquisite packaging
Discount
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The S80KS5123GABHM020 from Infineon Technologies is a high-performance Memory IC designed for modern electronic applications. This integrated circuit offers exceptional data storage and retrieval capabilities, making it ideal for devices requiring fast and reliable memory solutions. With advanced technology and robust construction, the S80KS5123GABHM020 ensures longevity and consistent performance in various environments.
Memory ICs like the S80KS5123GABHM020 are essential components in today's digital world, providing the necessary storage for data-intensive operations. These ICs feature low power consumption, high-speed access, and compact designs, catering to the growing demand for efficient memory solutions. Whether used in consumer electronics or industrial systems, the S80KS5123GABHM020 delivers unmatched reliability and efficiency.
The S80KS5123GABHM020 is widely used in applications such as smartphones, tablets, computers, and automotive systems. For instance, it can be found in smart devices where quick data access is crucial, or in automotive control units that require durable and high-speed memory. Its versatility and performance make it a top choice for engineers and designers looking for premium Memory ICs.
Specifications
- Product Status: Active
- Memory Type: Volatile
- Memory Format: PSRAM
- Technology: PSRAM (Pseudo SRAM)
- Memory Size: 512Mb (64M x 8)
- Memory Interface: SPI - Octal I/O
- Clock Frequency: 200 MHz
- Write Cycle Time - Word, Page: 35ns
- Access Time: 35 ns
- Voltage - Supply: 1.7V ~ 2V
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 24-VBGA
- Supplier Device Package: 24-FBGA (6x8)
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