SCT10N120H
STMicroelectronics
STMicroelectronics
SICFET N-CH 1200V 12A H2PAK-2
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Optimize your power electronics with the SCT10N120H single MOSFET from STMicroelectronics. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the SCT10N120H combines cutting-edge technology with STMicroelectronics's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 690mOhm @ 6A, 20V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: H2Pak-2
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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