SCT2160KEC
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 22A TO247
$0.00
Available to order
Reference Price (USD)
1+
$13.90000
10+
$12.77700
25+
$12.24720
100+
$10.79060
360+
$10.26100
720+
$9.59900
Exquisite packaging
Discount
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The SCT2160KEC from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's SCT2160KEC for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 208mOhm @ 7A, 18V
- Vgs(th) (Max) @ Id: 4V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 165W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
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