SCT2280KEGC11
Rohm Semiconductor
Rohm Semiconductor
1200V, 14A, THD, SILICON-CARBIDE
$13.68
Available to order
Reference Price (USD)
1+
$13.68000
500+
$13.5432
1000+
$13.4064
1500+
$13.2696
2000+
$13.1328
2500+
$12.996
Exquisite packaging
Discount
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The SCT2280KEGC11 single MOSFET from Rohm Semiconductor is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the SCT2280KEGC11 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 364mOhm @ 4A, 18V
- Vgs(th) (Max) @ Id: 4V @ 1.4mA
- Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 667 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 108W (Tc)
- Operating Temperature: 175°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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