SCT3022KLHRC11
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 95A TO247N
$138.93
Available to order
Reference Price (USD)
1+
$110.22000
10+
$104.53400
25+
$101.68960
100+
$99.55620
Exquisite packaging
Discount
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The SCT3022KLHRC11 from Rohm Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Rohm Semiconductor's SCT3022KLHRC11 for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 28.6mOhm @ 36A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 18.2mA
- Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 2879 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 427W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247N
- Package / Case: TO-247-3
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