SCT3060AW7TL
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 38A TO263-7
$19.87
Available to order
Reference Price (USD)
1+
$19.87000
500+
$19.6713
1000+
$19.4726
1500+
$19.2739
2000+
$19.0752
2500+
$18.8765
Exquisite packaging
Discount
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Meet the SCT3060AW7TL by Rohm Semiconductor, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The SCT3060AW7TL stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose Rohm Semiconductor.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 159W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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